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Same model may have multiple batches, images only for reference.
SI4638DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4638DY-T1-E3

Part No SI4638DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22.4A 8SOIC
Datasheet
SI4638DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 1mA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4190pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 5.9W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064500-SI4638DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4638DY-T1-E3 CAD Model

Description

The Vishay SI4638DY-T1-E3 MOSFET is a high-performance electronic component designed for use in discrete semiconductor products.

  • Package: 8-SO
  • Mounting: SMD mounting
  • Maximum drain-source voltage: 30V
  • Maximum gate-source voltage: ±20V
  • Current rating: 15A
  • Maximum power dissipation: 3W (Ta), 5.9W (Tc)
  • Gate charge (Qg): 100nC @ 10V
  • Input capacitance (Ciss): 4190pF @ 15V
  • Status: Active
  • Temperature range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 6.5 mOhm @ 15A, 10V

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