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Same model may have multiple batches, images only for reference.
SI4752DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4752DY-T1-GE3

Part No SI4752DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A 8-SO
Datasheet
SI4752DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 1mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1700pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 3W (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096000-SI4752DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4752DY-T1-GE3 CAD Model

Description

The Vishay 1096000-SI4752DY-T1-GE3 is an N-Channel MOSFET with a Schottky Diode (Body) feature.

  • Manufacturer: Vishay
  • Channel Type: N-Channel
  • Feature: Schottky Diode (Body)
  • Power Dissipation: 3W (Ta), 6.25W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Mounting Type: SMD (SMT)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Maximum Rds On @ Id, Vgs: 5.5 mOhm @ 10A, 10V

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