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IPA60R650CEXKSA1

Part No IPA60R650CEXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS CE
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 20.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 440pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 28W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 2.4A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-FP
Package TO-220-3 Full Pack
Win Source Part Number 776836-IPA60R650CEXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPA60R650CE
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPA60R650CEXKSA1 CAD Model

Description

The IPA60R650CEXKSA1 is a CoolMOS™ CE series power MOSFET from Infineon Technologies. It is a high-performance superjunction MOSFET designed for high-efficiency and high-density power conversion systems. The CE series is optimized for ease of use and offers a good balance between efficiency and thermal performance.

Applications

  • Switched-mode power supplies (SMPS)
  • Power factor correction (PFC)
  • Lighting applications
  • Server and telecom power supplies

Features

  • CoolMOS™ CE technology
  • Integrated Zener Diode
  • Low switching losses
  • Low on-resistance (RDS(on))
  • Improved commutation ruggedness

Benefits

  • High efficiency
  • Simplified design due to integrated Zener Diode for ESD protection
  • Reduced system cost
  • Improved reliability

Additional Details

The IPA60R650CEXKSA1 has a drain-source voltage (VDS) of 650V and a typical on-resistance (RDS(on)) of 650 mOhms. The device comes in a PG-TO220-3 package. The integrated Zener diode simplifies the design. It is optimized for a wide range of applications where high efficiency and ease of use are important. The integrated Zener diode protects the gate against overvoltage, which can cause electrostatic discharge (ESD) damage. The device is RoHS compliant.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1416 $51.3720
110+ $0.9367 $103.0370
170+ $0.9075 $154.2750
230+ $0.8782 $201.9860
295+ $0.8489 $250.4255
395+ $0.7611 $300.6345
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,371 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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