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Same model may have multiple batches, images only for reference.
R6012JNXC7G Real Image
Same model may have multiple batches, images only for reference.

R6012JNXC7G

Part No R6012JNXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220FM  /  N-Channel 600 V 12A (Tc) 60W (Tc) Through Hole TO-220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 390mOhm @ 6A, 15V
Vgs(th) (Max) @ Id 7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
Base Product Number R6012
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6012JNXC7G
Standard Package 1,000
Win Source Part Number 1209325-R6012JNXC7G
Ultra Librarian 3D Model Ultra Librarian R6012JNXC7G CAD Model

Description

The R6012JNXC7G is a discrete semiconductor product. It is manufactured by Rohm Semiconductor.

  • Type: MOSFET (Metal Oxide) transistor
  • Channel Type: N-channel FET
  • Maximum Drain to Source Voltage: 600 V
  • Continuous Drain Current: 12A @ 25°C
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
  • Package Type: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FM

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