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Same model may have multiple batches, images only for reference.
SI4800BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4800BDY-T1-GE3

Part No SI4800BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 8-SOIC
Datasheet
SI4800BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028524-SI4800BDY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4800BDY-T1-GE3 CAD Model

Description

The SI4800BDY-T1-GE3 is a MOSFET electronic component manufactured by Vishay. It is a medium popularity component that has a sufficient supply and demand status. The component is designed to provide a reliable performance, making it suitable for use in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
370+ $0.1355 $50.1350
900+ $0.1112 $100.0800
1,395+ $0.1077 $150.2415
1,920+ $0.1043 $200.2560
2,485+ $0.1008 $250.4880
3,320+ $0.0904 $300.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,500 pieces
MOQ: 370 pcs
Order Increment : 1 pcs
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