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Same model may have multiple batches, images only for reference.
SI4804BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4804BDY-T1-E3

Part No SI4804BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.7A 8-SOIC
Datasheet
SI4804BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 101325-SI4804BDY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4804BDY-T1-E3 CAD Model

Description

The Vishay 101325-SI4804BDY-T1-E3 is a dual N-channel logic level gate FET, which is a part of the Discrete Semiconductor Products category.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Status: Obsolete
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.7A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Supply and Demand: Sufficient
  • Application: Industrial power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6437 $57.9330
220+ $0.5282 $116.2040
340+ $0.5117 $173.9780
470+ $0.4952 $232.7440
605+ $0.4788 $289.6740
810+ $0.4292 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64,400 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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