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Same model may have multiple batches, images only for reference.
SI4684DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4684DY-T1-E3

Part No SI4684DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
SI4684DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2080pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028518-SI4684DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4684DY-T1-E3 CAD Model

Description

The SI4684DY-T1-E3 from Vishay is a high-performance N-channel MOSFET designed for use in various electronic applications.

  • On-resistance: Low
  • Current handling capability: High
  • Ideal for: High-power applications
  • Reliability: Very reliable
  • Failure rate: Low
  • Operating life: Long

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1056 $60.8080
130+ $0.9071 $117.9230
200+ $0.8789 $175.7800
275+ $0.8505 $233.8875
355+ $0.8221 $291.8455
475+ $0.7371 $350.1225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,156 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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