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Same model may have multiple batches, images only for reference.
SI4812BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4812BDY-T1-GE3

Part No SI4812BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.3A 8-SOIC
Datasheet
SI4812BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028527-SI4812BDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4812BDY-T1-GE3 CAD Model

Description

The Vishay SI4812BDY-T1-GE3 is a high popularity electronic component that comes with an 8-SO case/package and a MOSFET technology.

  • Case/Package: 8-SO
  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 9.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,490+ $0.1940 $289.0600
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 103,400 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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