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SI4816BDY-T1-GE3 Real Image SI4816BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI4816BDY-T1-GE3 Real Image SI4816BDY-T1-GE3 Real Image
SI4816BDY-T1-GE3 Real Image SI4816BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4816BDY-T1-GE3

Part No SI4816BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.8A 8-SOIC
Datasheet
SI4816BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 8.2A
Maximum Rds On at Id,Vgs 18.5 mOhm @ 6.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 5V
Maximum Power Dissipation 1W, 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064519-SI4816BDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si4816BDY
Introduction Date October 28, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI4816BDY-T1-GE3 CAD Model

Description

The Si4816BDY-T1-GE3 is a 2 N-Channel (Half Bridge) FET designed for use in discrete semiconductor products.

  • Gate: Logic level gate
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A @ 25°C
  • Maximum Power Dissipation: 1W and 1.25W
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 18.5 mOhm @ 6.8A, 10V
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Overall: Reliable and efficient solution for half bridge FET applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6532 $52.2560
165+ $0.6111 $100.8315
255+ $0.5900 $150.4500
370+ $0.5479 $202.7230
475+ $0.5268 $250.2300
595+ $0.5058 $300.9510
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