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Same model may have multiple batches, images only for reference.
SI4822DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4822DY-T1-E3

Part No SI4822DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 30V 12A 2.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 12 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 10 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 2.5 W
Rise Time 20 ns
RoHS Compliant
Turn-Off Delay Time 75 ns
Turn-On Delay Time 20 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1001816-SI4822DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4822DY-T1-E3 CAD Model

Description

The Vishay SI4822DY-T1-E3 is a single-channel MOSFET transistor that is designed for use in RF applications.

  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation: 2.5 W
  • Rise Time: 20 ns
  • Fall Time: 45 ns
  • Installation: Surface mount
  • Weight: 186.993455 mg in the open market.
  • Supply: Short supply
  • RoHS Compliant: RoHS compliant
  • Maximum Operating Temperature: 150 °C
  • Use case: Excellent choice for applications that require a high-performance MOSFET transistor

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