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Same model may have multiple batches, images only for reference.
SI4831BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4831BDY-T1-E3

Part No SI4831BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI4831BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series LITTLE FOOT®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 15 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4831
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277696-SI4831BDY-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI4831BDY-T1-E3 CAD Model

Description

The Vishay Siliconix SI4831BDY-T1-E3 is a P-channel MOSFET transistor that belongs to the LITTLE FOOT® series.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 6.6A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 15 V
  • Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
  • Package: Tape and Reel
  • Standard Package: 2,500
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Gate-Source Voltage (Max): ±20V
  • Application: Variety of applications

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