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Same model may have multiple batches, images only for reference.
SI4834CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4834CDY-T1-E3

Part No SI4834CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8SOIC
Datasheet
SI4834CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 950pF @ 15V
Maximum Power Dissipation 2.9W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 138729-SI4834CDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4834CDY-T1-E3 CAD Model

Description

The electronic component with Id 329337 is a dual N-channel FET manufactured by Vishay.

  • Category: Discrete semiconductor product
  • Status: Active
  • Mounting Technology: Surface-mount
  • Package: 8-SO
  • Maximum Power Dissipation: 2.9W
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0926 $60.0930
130+ $0.8965 $116.5450
200+ $0.8685 $173.7000
275+ $0.8405 $231.1375
360+ $0.8124 $292.4640
480+ $0.7283 $349.5840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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