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Same model may have multiple batches, images only for reference.
SI4862DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4862DY-T1-GE3

Part No SI4862DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4862
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277524-SI4862DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4862DY-T1-GE3 CAD Model

Description

The SI4862DY-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix.

  • Series: TrenchFET
  • Packaging: Tape and Reel (TR)
  • FET Type: N-channel MOSFET
  • Drain to Source Voltage (Vdss): 16 V
  • Continuous Drain Current (Id): 17A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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