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Same model may have multiple batches, images only for reference.
SI4886DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4886DY-T1-GE3

Part No SI4886DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.5A 8-SOIC / Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 800mV @ 250μA (Minimum)
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 5V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.56W (Ta)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 13A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794276-SI4886DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4886DY
Introduction Date April 20, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4886DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4886DY-T1-GE3 MOSFET is a high-performance transistor.

  • Maximum Continuous Drain Current: 9.5A
  • Operating Temperature Range: -55°C to 150°C
  • Gate Threshold Voltage: 800mV @ 250μA
  • Gate Charge: 20nC @ 5V
  • Maximum Power Dissipation: 1.56W
  • Maximum On-Resistance: 10 mOhm @ 13A, 10V
  • Series: TrenchFET
  • Package: 8-SOIC
  • Mounting: Surface-Mount
  • Alternative Part Cross-reference: MMSF3350R2, FDS6294, FDS6680-L99Z, DMG8880LSS
  • Manufacturing Location: United States of America
  • Estimated EOL Date: Obsolete/End of Life

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