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Same model may have multiple batches, images only for reference.
SI4888DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4888DY-T1-GE3

Part No SI4888DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
SI4888DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 24nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 7 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 118409-SI4888DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4888DY-T1-GE3 CAD Model

Description

The Vishay 118409-SI4888DY-T1-GE3 is an N-Channel polarity MOSFET electronic component.

  • Application: discrete semiconductor products
  • Status: obsolete (EOL)
  • Maximum Power Dissipation: 1.6W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain Current @ 25°C: 11A (Ta)

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