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SI4906DY-T1-E3

Part No SI4906DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 6.6A 8-SOIC
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6.6A
Maximum Rds On at Id,Vgs 39 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 625pF @ 20V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 136393-SI4906DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4906DY-T1-E3 CAD Model

Description

The SI4906DY-T1-E3 is a dual N-channel MOSFET electronic component manufactured by Vishay.

  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 40V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Maximum Rds On at Id, Vgs: 39 mOhm @ 5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3592 $116.7400
500+ $0.3477 $173.8500
690+ $0.3361 $231.9090
890+ $0.3257 $289.8730
1,190+ $0.2922 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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