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Same model may have multiple batches, images only for reference.
SI4910DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4910DY-T1-E3

Part No SI4910DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 7.6A 8-SOIC
Datasheet
SI4910DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.6A
Maximum Rds On at Id,Vgs 27 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 855pF @ 20V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 123998-SI4910DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4910DY-T1-E3 CAD Model

Description

The Vishay 123998-SI4910DY-T1-E3 is a dual N-channel standard FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 7.6A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 855pF @ 20V
  • Maximum Rds On at Id,Vgs: 27 mOhm @ 6A, 10V
  • Status: obsolete (EOL)
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 612 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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