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Same model may have multiple batches, images only for reference.
SI4947ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4947ADY-T1-GE3

Part No SI4947ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3A 8-SOIC
Datasheet
SI4947ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 80 mOhm @ 3.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 8nC @ 5V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096045-SI4947ADY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4947ADY-T1-GE3 CAD Model

Description

The Vishay SI4947ADY-T1-GE3 is a discrete semiconductor product with 2 P-Channel (Dual) FET type and logic level gate feature.

  • Application: power management, consumer electronics, computers & computer peripherals
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 1.2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Max Gate Charge: 8nC @ 5V
  • Maximum Rds On @ Id,Vgs: 80 mOhm @ 3.9A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Supply and Demand Status: balanced

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