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SI4966DY-E3

Part No SI4966DY-E3
Manufacturer Vishay
Catalog FETs - Arrays
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Arrays
Win Source Part Number 190030-SI4966DY-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4966DY-E3 CAD Model

Description

The SI4966DY-E3 is a P-Channel MOSFET from Vishay Siliconix. It is designed for a variety of power management applications, including load switching and DC-DC conversion. The device features a low on-resistance (RDS(on)) and is optimized for efficient power handling. The “E3” suffix indicates that the component is lead (Pb)-free and halogen-free, making it compliant with environmental standards.

Applications

  • Load Switching
  • DC-DC Converters
  • Power Management in Portable Devices
  • Battery Management Systems
  • High-Side Load Switching

Features

  • Low RDS(on) for reduced power losses
  • Logic Level Gate Drive for easy interfacing with logic circuits
  • Surface Mount Package (SO-8) for compact designs
  • TrenchFET® Power MOSFET Technology for efficient performance
  • Lead (Pb)-Free and Halogen-Free, complying with environmental regulations

Benefits

  • Improved efficiency due to low on-resistance
  • Simplified circuit design with logic level gate drive
  • Reduced board space with the small SO-8 package
  • Enhanced reliability and performance in power management systems
  • Environmentally friendly due to compliance with RoHS standards

Additional Details

The SI4966DY-E3 boasts a low RDS(on), which significantly reduces conduction losses, enhancing overall system efficiency. This parameter typically measures around 0.045 Ohms at a gate-source voltage (VGS) of -4.5V. The logic-level gate drive simplifies the interfacing with low-voltage control circuits, eliminating the need for additional level-shifting components. The SO-8 surface mount package contributes to compact designs and facilitates efficient thermal management.

The use of TrenchFET® power MOSFET technology ensures a good balance between on-resistance, gate charge, and breakdown voltage. This technology allows the device to deliver high performance while maintaining a compact size. The lead-free and halogen-free construction makes the SI4966DY-E3 suitable for applications where environmental compliance is a key requirement.

The device is typically used in applications where a P-Channel MOSFET is needed to switch a load on and off, or in DC-DC converters for power management. The SI4966DY-E3’s robust design and efficient performance make it a reliable choice for a wide range of electronic devices.

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