The Vishay SI5419DU-T1-GE3 is a P-channel MOSFET that is ideal for use in discrete semiconductor products.

• Maximum Power Dissipation: 3.1W (Ta) and 31W (Tc)
• Drain-Source Breakdown Voltage: 30V
• Maximum Rds On @ Id, Vgs: 20 mOhm @ 6.6A, 10V
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Max Gate Charge: 45nC @ 10V
• Maximum Input Capacitance: 1400pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting: SMD (SMT)
• Technology: MOSFET
• Polarity: P-Channel
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Case/Package: 8-PowerPak ChipFet (3x1.9)
• Dimensions: 8-PowerVDFN
• Category: Discrete Semiconductor Products
• Status: Currently active.
• Supply and Demand Status: Balance.