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Same model may have multiple batches, images only for reference.
SI5433BDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5433BDC-T1-E3

Part No SI5433BDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.8A 1206-8
Datasheet
SI5433BDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 22nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 37 mOhm @ 4.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 101290-SI5433BDC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5433BDC-T1-E3 CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay.

  • Channel: P-channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.8A (Ta)
  • Product Status: Obsolete (EOL)
  • Package: 1206-8 ChipFET
  • Dimensions: 8-SMD, flat lead
  • Technology: SMD (SMT)
  • Polarity: P-Channel

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
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