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Same model may have multiple batches, images only for reference.
SI5441BDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5441BDC-T1-E3

Part No SI5441BDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.4A 1206-8
Datasheet
SI5441BDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 22nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 4.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 098329-SI5441BDC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5441BDC-T1-E3 CAD Model

Description

The Vishay SI5441BDC-T1-E3 is a P-Channel MOSFET with a maximum power dissipation of 1.3W (Ta).

  • Series: 098329-SI5441BDC-T1-E3
  • Packaging: Reel-TR
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 2.5V, 4.5V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: 1206-8 ChipFET
  • Dimensions: 8-SMD, flat lead
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 22nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 4.4A, 4.5V
  • Supply and Demand Status: Sufficient

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