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Same model may have multiple batches, images only for reference.
SI5480DU-T1-GE3
Same model may have multiple batches, images only for reference.

SI5480DU-T1-GE3

Part No SI5480DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A PPAK CHIPFET
Datasheet
SI5480DU-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1230pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK ChipFet Single
Dimension PowerPAK ChipFET Single
Win Source Part Number 064533-SI5480DU-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5480DU-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance electronic component that provides excellent power dissipation and drive voltage.

  • Type: N-Channel MOSFET
  • Operating Temperature: Designed to operate in a wide range of temperatures
  • Applications: power supplies, audio amplifiers, and more
  • Status: Obsolete
  • Popularity: Popular choice among electronic enthusiasts and professionals alike
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8753 $61.2710
165+ $0.7182 $118.5030
250+ $0.6958 $173.9500
345+ $0.6734 $232.3230
445+ $0.6509 $289.6505
595+ $0.5835 $347.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 350 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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