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Same model may have multiple batches, images only for reference.
SI5480DU-TI-GE3
Same model may have multiple batches, images only for reference.

SI5480DU-TI-GE3

Part No SI5480DU-TI-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 12A PPAK CHIPFET
Datasheet
SI5480DU-TI-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 16 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max 31W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package PowerPAK ChipFET Single
Manufacturer Device Package PowerPAK ChipFet Single
Win Source Part Number 190046-SI5480DU-TI-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5480DU-TI-GE3 CAD Model

Description

The Vishay SI5480DU-TI-GE3 is a MOSFET N-Channel, Metal Oxide transistor that is suitable for a range of applications.

  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current at 25°C: 12A
  • Applications: power supply, motor control, and lighting

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