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SI5515DC-T1-E3

Part No SI5515DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 4.4A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A, 3A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 028580-SI5515DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5515DC-T1-E3 CAD Model

Description

The Vishay 028580-SI5515DC-T1-E3 is a N and P-Channel Logic Level Gate FET, designed for use in Discrete Semiconductor Products.

  • Mounting: SMD (SMT) technology
  • Packaging: Reel - TR
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.4A and 3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 7.5nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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