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SI6975DQ-T1-E3

Part No SI6975DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.3A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 27 mOhm @ 5.1A, 4.5V
Gate-Source Threshold Voltage 450mV @ 5mA (Min)
Max Gate Charge 30nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 064544-SI6975DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6975DQ-T1-E3 CAD Model

Description

The Vishay MOSFET (Model Number SI6975DQ-T1-E3) is a P-Channel (Dual) FET type electronic component designed for use in discrete semiconductor products.

  • Package: 8-TSSOP
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4.3A
  • Maximum Rds On @ Id,Vgs: 27 mOhm @ 5.1A, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 5mA (Min)
  • Maximum Gate Charge: 30nC @ 4.5V
  • Status: Active product
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7204 $60.2140
85+ $1.4116 $119.9860
130+ $1.3675 $177.7750
175+ $1.3234 $231.5950
230+ $1.2793 $294.2390
305+ $1.1469 $349.8045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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