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Same model may have multiple batches, images only for reference.
SI5853CDC-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI5853CDC-T1-E3

Part No SI5853CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A 1206-8
Datasheet
SI5853CDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 8V
Max Input Capacitance 350pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.5W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 104 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 064535-SI5853CDC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5853CDC-T1-E3 CAD Model

Description

The electronic component with Id 329595 is a MOSFET manufactured by Vishay.

  • Feature: Schottky diode (isolated)
  • Polarity: P-Channel
  • Maximum Power Dissipation: 1.5W (Ta) and 3.1W (Tc)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium popularity
  • Threat of Fake Products: 44%
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,787 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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