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SI5853DDC-T1-E3

Part No SI5853DDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 8V
Max Input Capacitance 320pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028581-SI5853DDC-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5853DDC-T1-E3 CAD Model

Description

The Vishay SI5853DDC-T1-E3 is a MOSFET designed for discrete semiconductor products.

  • Feature: Schottky diode that is isolated
  • Polarity: P-Channel
  • Package: 1206-8 ChipFET
  • Dimension: 8-SMD, Flat Lead
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12nC @ 8V
  • Maximum Input Capacitance: 320pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id,Vgs: 105 mOhm @ 2.9A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1998 $57.9420
705+ $0.1640 $115.6200
1,090+ $0.1594 $173.7460
1,505+ $0.1536 $231.1680
1,940+ $0.1490 $289.0600
2,590+ $0.1340 $347.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,900 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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