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SI5902DC

Part No SI5902DC
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 30-V (D-S) MOSFET
Sample
Rohs State rohs
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Manufacturer Vishay
Win Source Part Number 1249334-SI5902DC
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5902DC CAD Model

Description

The Si5902DC is a P-Channel MOSFET manufactured by Vishay. This device integrates two P-Channel MOSFETs into a single PowerPAK® SC-70 package. It's designed for load switching and high-efficiency DC-DC conversion applications. The dual MOSFET configuration allows for greater design flexibility and improved space efficiency on circuit boards.

Applications:

  • Load switching in portable devices.
  • Battery management systems.
  • DC-DC converters.
  • Power management in smartphones and tablets.
  • Wearable technology.

Features:

  • Dual P-Channel MOSFETs.
  • Low on-resistance (RDS(on)).
  • Low threshold voltage (VGS(th)).
  • Small PowerPAK® SC-70 package.
  • 1.8V Logic Level Compatible
  • TrenchFET® Power MOSFET Technology

Benefits:

  • Saves board space with integrated dual MOSFETs.
  • Improves efficiency in switching applications due to low RDS(on).
  • Can be driven directly by low-voltage logic circuits.
  • Compact design suitable for portable devices.
  • Enhanced thermal performance.

Additional Details:

The low RDS(on) of the Si5902DC minimizes power losses during switching, contributing to higher efficiency in DC-DC converters and load switching circuits. The low threshold voltage allows the MOSFET to be driven by low-voltage logic levels, such as those found in microcontrollers and digital signal processors. The PowerPAK® SC-70 package provides excellent thermal performance despite its small size, enabling efficient heat dissipation. Important parameters to consider when using the Si5902DC include the gate-source voltage (VGS), drain current (ID), and power dissipation. The datasheet from Vishay provides detailed electrical characteristics, thermal resistance values, and application notes to assist in proper design and layout. Proper gate drive circuitry is essential to optimize switching performance and minimize EMI. Layout considerations, such as minimizing parasitic inductance, are crucial for achieving optimal performance in high-frequency switching applications. The specific RDS(on) values at different VGS voltages and drain currents are important for selecting the appropriate device for a given application. The device is RoHS compliant and halogen-free.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.1127 $56.7889
16+ $6.6566 $106.5056
24+ $6.4486 $154.7664
33+ $6.2406 $205.9398
42+ $6.0326 $253.3692
56+ $5.4085 $302.8760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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