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SI5903DC-T1

Part No SI5903DC-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.1A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 155 mOhm @ 2.1A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 093133-SI5903DC-T1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si5903DC
Introduction Date April 24, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI5903DC-T1 CAD Model

Description

The supply and demand status of this product is balanced. It is manufactured by Vishay and is a part of the Si5903DC family name.

  • FET Type: P-Channel
  • Feature: Dual
  • Gate: Logic Level Gate
  • Package: 1206-8 ChipFET
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.1A
  • Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
  • Maximum Rds On @ Id,Vgs: 155 mOhm @ 2.1A, 4.5V
  • Introduction Date: April 24, 2000
  • Status: Obsolete (EOL)
  • Estimated EOL Date: Obsolete
  • Usage: Common-used part
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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