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Same model may have multiple batches, images only for reference.
SI5908DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5908DC-T1-GE3

Part No SI5908DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.4A 1206-8
Datasheet
SI5908DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 126041-SI5908DC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5908DC-T1-GE3 CAD Model

Description

The Vishay 126041-SI5908DC-T1-GE3 is a dual N-channel Logic Level Gate FET designed for use in Discrete Semiconductor Products.

  • Mounting: 1206-8 ChipFET
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.4A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 7.5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 4.4A, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.4627 $52.3881
7+ $14.3284 $100.2988
11+ $13.8806 $152.6866
15+ $13.4329 $201.4935
20+ $12.9851 $259.7020
26+ $11.6418 $302.6868
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Availability: 32,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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