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SI5920DC-T1-GE3

Part No SI5920DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 8V 4A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 32 mOhm @ 6.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 680pF @ 4V
Maximum Power Dissipation 3.12W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 120338-SI5920DC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5920DC-T1-GE3 CAD Model

Description

The electronic component with Win Source Part Number 120338-SI5920DC-T1-GE3 is a dual N-channel FET that belongs to the discrete semiconductor products category.

  • Category: Discrete Semiconductor Products
  • FET Type: Dual N-channel
  • Gate Type: Logic Level Gate

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7371 $58.9680
195+ $0.6049 $117.9555
300+ $0.5860 $175.8000
410+ $0.5671 $232.5110
530+ $0.5482 $290.5460
710+ $0.4915 $348.9650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,462 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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