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Same model may have multiple batches, images only for reference.
SI6404DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6404DQ-T1-GE3

Part No SI6404DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V
Vgs (Max) ±12V
Power Dissipation (Max) 1.08W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Product Number SI6404
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277515-SI6404DQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6404DQ-T1-GE3 CAD Model

Description

The Vishay Siliconix SI6404DQ-T1-GE3 TrenchFET series MOSFET is a reliable and high-quality electronic component.

  • Voltage Range: 30V
  • Current Range: 8.6A
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V
  • Package: 8-TSSOP (0.173", 4.40mm Width)
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
  • Temperature Range for Operating: -55°C to 150°C (TJ)

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