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Same model may have multiple batches, images only for reference.
SI6415DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6415DQ-T1-E3

Part No SI6415DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.5A 8-TSSOP
Datasheet
SI6415DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 70nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 19 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 103003-SI6415DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6415DQ-T1-E3 CAD Model

Description

The SI6415DQ-T1-E3 from Vishay is a high-performance P-Channel MOSFET that is designed to deliver superior performance in a wide range of applications. The supply and demand status of this product is balanced.

  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 1.5W
  • Maximum Rds On @ Id,Vgs: 19 mOhm @ 6.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
27+ $1.8619 $50.2713
58+ $1.7418 $101.0244
90+ $1.6818 $151.3620
129+ $1.5616 $201.4464
167+ $1.5016 $250.7672
209+ $1.4415 $301.2735
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Availability: 38,941 pieces
MOQ: 27 pcs
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