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SI7658ADP-T1-GE3

Part No SI7658ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A PPAK SO-8 / Trans MOSFET N-CH 30V 36A 8-Pin PowerPAK SO EP T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4590pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028660-SI7658ADP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7658ADP
Introduction Date May 23, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7658ADP-T1-GE3 CAD Model

Description

The Vishay MOSFET is a widely used component in electronic circuits.

  • Win Source Part Number: 028660-SI7658ADP-T1-GE3
  • Technology: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 60A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 2.2 mOhm @ 20A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: PowerPAK SO-8
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6913 $51.8475
155+ $0.6467 $100.2385
245+ $0.6244 $152.9780
345+ $0.5798 $200.0310
450+ $0.5575 $250.8750
565+ $0.5352 $302.3880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,564 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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