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Same model may have multiple batches, images only for reference.
SI6435ADQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6435ADQ-T1-GE3

Part No SI6435ADQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.7A 8-TSSOP
Datasheet
SI6435ADQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1096104-SI6435ADQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6435ADQ-T1-GE3 CAD Model

Description

The Vishay MOSFET is a P-channel polarity electronic component designed for use in discrete semiconductor products manufactured by Vishay.

  • Power Dissipation: 1.05W (Ta)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.7A (Ta)
  • Maximum Rds On @ Id, Vgs: 30 mOhm @ 5.5A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 20nC @ 5V
  • Package: 8-TSSOP
  • Dimensions: 0.173" and 4.40mm width
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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