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Same model may have multiple batches, images only for reference.
SI6966EDQ-T1
Same model may have multiple batches, images only for reference.

SI6966EDQ-T1

Part No SI6966EDQ-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 20V 4.5A 1W
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 5.2 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 30 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Dual
Fall Time 130 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.25 W
Min Operating Temperature -55 °C
Number of Channels 2
Power Dissipation 1.25 W
Rise Time 130 ns
RoHS Non-Compliant
Turn-Off Delay Time 420 ns
Turn-On Delay Time 100 ns
Weight 19.986414 mg
Win Source Part Number 982128-SI6966EDQ-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6966EDQ-T1 CAD Model

Description

The Vishay SI6966EDQ-T1 is a dual-channel MOSFET transistor that is commonly used in RF applications.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 5.2A
  • Rise and Fall Time: 130ns
  • Package: TSSOP package
  • Maximum Operating Temperature: 150°C
  • Popularity: low popularity
  • Market: currently facing a shortage in the market.
  • RoHS: non-compliant with RoHS regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6815 $57.9275
210+ $0.5593 $117.4530
320+ $0.5417 $173.3440
445+ $0.5243 $233.3135
570+ $0.5068 $288.8760
765+ $0.4544 $347.6160
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Availability: 2,360 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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