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Same model may have multiple batches, images only for reference.
SI6969BDQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6969BDQ-T1-GE3

Part No SI6969BDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Power - Max 830mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number SI6969
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278468-SI6969BDQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6969BDQ-T1-GE3 CAD Model

Description

The Vishay Siliconix SI6969BDQ-T1-GE3 is a dual P-channel MOSFET with a logic level gate.

  • Drain to Source Voltage: 12V
  • Continuous Drain Current: 4A @ 25°C
  • Rds On: 30mOhm @ 4.6A and 4.5V
  • Gate-Source Threshold Voltage: 800mV @ 250µA
  • Power: 830mW
  • Packaging: Tape and Reel

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