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Same model may have multiple batches, images only for reference.
SI7100DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7100DN-T1-E3

Part No SI7100DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 35A 1212-8
Datasheet
SI7100DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 105nC @ 8V
Max Input Capacitance 3810pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 137899-SI7100DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7100DN-T1-E3 CAD Model

Description

The Vishay SI7100DN-T1-E3 is a MOSFET that can be used in industrial power management.

  • Package: SMD (SMT)
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current @ 25°C: 35A (Tc)
  • Max Gate Charge: 105nC @ 8V
  • Max Input Capacitance: 3810pF @ 4V
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
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Availability: 3,885 pieces
MOQ: 45 pcs
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