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Same model may have multiple batches, images only for reference.
SI7112DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7112DN-T1-GE3

Part No SI7112DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.3A 1212-8
Datasheet
SI7112DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2610pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 17.8A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 137721-SI7112DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7112DN-T1-GE3 CAD Model

Description

The SI7112DN-T1-GE3 is an N-channel MOSFET from Vishay.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11.3A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Rds On: 7.5 mOhm @ 17.8A and 10V
  • Application: discrete semiconductor products
  • Mounting Technology: surface mount technology (SMT)
  • Temperature Range: -50°C to 150°C
  • Package: PowerPAK 1212-8 case
  • Supply and Demand Status: balanced

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