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Same model may have multiple batches, images only for reference.
IRF1010EZSTRLP
Same model may have multiple batches, images only for reference.

IRF1010EZSTRLP

Part No IRF1010EZSTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
IRF1010EZSTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 120770-IRF1010EZSTRLP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010EZSTRLP CAD Model

Description

The Infineon Technologies 120770-IRF1010EZSTRLP is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 75A (Tc).

  • Maximum Gate-Source Voltage: ±20V
  • Max Rds On at Id,Vgs: 8.5 mOhm @ 51A, 10V
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)

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Quantity Unit Price Ext. Price
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42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 2,270 pieces
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