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SI7115DN-T1-GE3

Part No SI7115DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 150V 8.9A 1212-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1190pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 295 mOhm @ 4A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028602-SI7115DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SI7115DN
Introduction Date August 28, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7115DN-T1-GE3 CAD Model

Description

The Vishay SI7115DN-T1-GE3 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a maximum continuous drain current of 8.9A at 25°C. The device has a maximum power dissipation of 3.7W at Ta and 52W at Tc. It is available in a PowerPAK 1212-8 package and is suitable for use in power supplies, motor control, and other high voltage applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 109,388 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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