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SI7117DN-T1-E3

Part No SI7117DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 2.17A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 130572-SI7117DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7117DN-T1-E3 CAD Model

Description

The Vishay 130572-SI7117DN-T1-E3 is a P-channel MOSFET chip that comes in a PowerPAK 1212-8 package.

  • FET Type: ideal for use in discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current at 25°C: 2.17A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
  • Supply and Demand Status: Limited
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3690 $51.6600
335+ $0.3028 $101.4380
515+ $0.2933 $151.0495
705+ $0.2839 $200.1495
915+ $0.2744 $251.0760
1,220+ $0.2460 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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Shipped from HK warehouse
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