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SI7129DN-T1-GE3

Part No SI7129DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 35A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 3345pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Maximum Rds On at Id,Vgs 11.4 mOhm @ 14.4A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028606-SI7129DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si7129DN
Introduction Date October 30, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI7129DN-T1-GE3 CAD Model

Description

The Vishay SI7129DN-T1-GE3 is a MOSFET with a polarity of P-Channel.

  • Power Dissipation: 3.8W (Ta), 52.1W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 35A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate Charge: 71nC @ 10V
  • Maximum Input Capacitance: 3345pF @ 15V
  • Maximum Rds On at Id,Vgs: 11.4 mOhm @ 14.4A, 10V
  • Packaging: PowerPAK 1212-8
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2667 $50.6730
460+ $0.2189 $100.6940
710+ $0.2120 $150.5200
975+ $0.2052 $200.0700
1,265+ $0.1984 $250.9760
1,690+ $0.1778 $300.4820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 435,760 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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