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Same model may have multiple batches, images only for reference.
SI7136DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7136DP-T1-GE3

Part No SI7136DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 30A PPAK SO-8 / Trans MOSFET N-CH 20V 29.5A 8-Pin PowerPAK SO T/R
Datasheet
SI7136DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3380pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 5W (Ta), 39W (Tc)
Rds On (Maximum) @ Id, Vgs 3.2 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794309-SI7136DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7136DP
Introduction Date March 07, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7136DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7136DP-T1-GE3 is a MOSFET electronic component.

  • Series: TrenchFET
  • Package: PowerPAK SO-8
  • Channel Type: N channel
  • Drain Source Voltage: 20V
  • Gate Charge: 78nC @ 10V
  • Input Capacitance: 3380pF @ 10V
  • Maximum Vgs: ±20V
  • Power Dissipation: 5W (Ta), 39W (Tc)
  • Rds On: 3.2 mOhm @ 20A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Limited

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