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SI7159DP-T1-GE3 Real Image1 SI7159DP-T1-GE3 Real Image2
Same model may have multiple batches, images only for reference.
SI7159DP-T1-GE3 Real Image1 SI7159DP-T1-GE3 Real Image2
SI7159DP-T1-GE3 Real Image1 SI7159DP-T1-GE3 Real Image2
Same model may have multiple batches, images only for reference.

SI7159DP-T1-GE3

Part No SI7159DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 30A PPAK SO-8
Datasheet
SI7159DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 5170pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096142-SI7159DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7159DP-T1-GE3 CAD Model

Description

The Vishay SI7159DP-T1-GE3 is a P-Channel MOSFET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 5170pF @ 15V
  • Maximum Gate-Source Voltage: ±25V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Package: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balance

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