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Same model may have multiple batches, images only for reference.
SI7222DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7222DN-T1-E3

Part No SI7222DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 6A 1212-8
Datasheet
SI7222DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 42 mOhm @ 5.7A, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 700pF @ 20V
Maximum Power Dissipation 17.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 102287-SI7222DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7222DN-T1-E3 CAD Model

Description

The 102287-SI7222DN-T1-E3 is an N-Channel Dual FET from Vishay.

  • Manufacturer: Vishay
  • Channel Type: N-Channel Dual
  • Case/Package: PowerPAK 1212-8 Dual
  • Mounting: SMD (SMT) technology
  • FET Feature: Standard
  • Power Dissipation: 17.8W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 6A
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 700pF @ 20V
  • Maximum Rds On (Id,Vgs): 42 mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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