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Same model may have multiple batches, images only for reference.
SI7272DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7272DP-T1-GE3

Part No SI7272DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Datasheet
SI7272DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A
Maximum Rds On at Id,Vgs 9.3 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Power Dissipation 22W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 028621-SI7272DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7272DP-T1-GE3 CAD Model

Description

This electronic component is a dual N-channel FET manufactured by Vishay.

  • Manufacturer: Vishay
  • Channel Type: dual N-channel
  • Gate Feature: Logic Level Gate
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 22W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 25A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 15V
  • Maximum Rds On (Id,Vgs): 9.3 mOhm @ 15A, 10V
  • Package: PowerPAK SO-8 Dual
  • Popularity: Medium
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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