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Same model may have multiple batches, images only for reference.
SI7366DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7366DP-T1-GE3

Part No SI7366DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 13A PPAK SO-8
Datasheet
SI7366DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096155-SI7366DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7366DP-T1-GE3 CAD Model

Description

The SI7366DP-T1-GE3 electronic component is manufactured by Vishay.

  • Polarity: N-channel MOSFET
  • Maximum Power Dissipation: 1.7W
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.5983 $59.7779
31+ $3.7731 $116.9661
48+ $3.6551 $175.4448
66+ $3.5372 $233.4552
85+ $3.4193 $290.6405
114+ $3.0656 $349.4784
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Availability: 12,906 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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