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Same model may have multiple batches, images only for reference.
SI7384DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7384DP-T1-GE3

Part No SI7384DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PPAK SO-8
Datasheet
SI7384DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028628-SI7384DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7384DP-T1-GE3 CAD Model

Description

The Vishay SI7384DP-T1-GE3 is a high-performance MOSFET that comes in a PowerPAK SO-8 package.

  • Package: PowerPAK SO-8
  • Supply and Demand Status: limited
  • Popularity Rate: medium
  • MSL Level: 3 (168 hours)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9653 $57.9180
150+ $0.7921 $118.8150
230+ $0.7673 $176.4790
315+ $0.7426 $233.9190
405+ $0.7179 $290.7495
540+ $0.6436 $347.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,337 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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